The LNM Institute of Information Technology

Harshvardhan Kumar

harshvardhan.kumar@lnmiit.ac.in

Date of joining:

15-03-2021

Department:

Electronics and Communication Engineering

Summary

I am an Assistant Professor at the Department of Electronics and Communication Engineering, The LNMIIT Jaipur, INDIA. I work in the area of Semiconductor and Photonic Devices for different applications such as fibre-optic telecommunication, biological, and mid-infrared (MIR) sensing/detection. If you are excited to know more about me and my work, feel free to connect through email.

Biography

Harshvardhan Kumar (Member, IEEE, Photonics Society, Electron Devices Society, and Sensors Council) received the bachelor of engineering (B.E.) degree in Electronics and Communication Engineering from Nagpur University, India, in 2014, the master of engineering (M.E.) degree in digital electronics from Amravati University, India, in 2017, and the Ph.D. degree in electronics and communication (photonic devices) from the National Institute of Technology Delhi (NITD), India, in 2020. He is currently working as an Assistant Professor at the Department of Electronics and Communication Engineering, The LNM Institute of Information Technology, Jaipur, India. Previously, he was working as a Postdoctoral Fellow at the National Chung Cheng University, Taiwan. He most recently got the "Young Scientist Award" in 2022 from the International Union of Radio Science (URSI) in recognition of his outstanding achievements and innovations in multidisciplinary research on electromagnetic fields and waves. He has authored numerous journals and international conference papers. He is also a reviewer of several journal papers as well. His research interests include multiphysics modeling of optoelectronic devices, nano-photonics, electronic devices, silicon-based photonics, and GeSn-based photodetectors.

Research Area

Optoelectronic devices, nano-photonics, and electronic devices, Silicon-based photonics, and GeSn-based photodetectors and light emitters.

Personal information

Name

Designation

Department

ORCID

Scopus_link

Website

Dr. Harshvardhan Kumar

Assistant Professor

Electronics and Communication Engineering

0000-0002-4803-810X

https://sites.google.com/lnmiit.ac.in/drharshvardhankumar

Education

	Degree/Diploma	Institute/ Organization	Year	Branch/Specialization
1	Ph. D. Doctor of Philosophy	National Institute of Technology Delhi, INDIA	2020	Electronics and Communication (Photonic Devices)
2	M. Tech. Master of Technology	Jointly with SGBAU and CSIR-CSIO, Chandigarh	2017	Electronics and Telecommunication (Digital Electronics)
3	B.E. Bachelor of Engineering	Nagpur University, Maharashtra, India	2014	Electronics and Communication

Experience

	Name of Organization	Post/Designation	Duration From	Duration To
1	National Chung Cheng University, Taiwan	Postdoctoral Research Fellow	2020	2021
2	National Chung Cheng University, Taiwan	Visiting Research Fellow	2019	2019
3	National Chung Cheng University, Taiwan	Visiting Research Fellow	2018	2018
4	CSIR-Central Scientific Instruments Organisation	Research Trainee	2016	2017

Publications

1	Harshvardhan Kumar, Tanisha Bohra, Apoorv Sharma, P. Susthitha Menon, and Agus Muhamad Hatta, Polarization diversity schemes for gas sensing applications: a comprehensive analysis and optimal design of high-performance Si1−xGex mid-infrared asymmetric rib cross-slot waveguides, Journal of the Optical Society of America B, November 2023
2	Bor-Wei Liang, Wen-Hao Chang, Chun-Sheng Huang, You-Jia Huang, Jyun-Hong Chen, Kai-Shin Li, Kristan Bryan Simbulan, Harshvardhan Kumar, Ching-Yuan Su, Chieh-Hsiung Kuan, Yann-Wen Lan, Self-powered broadband photodetection enabled by facile CVD-grown MoS 2/GaN heterostructures, Nanoscale, October 2023
3	Harshvardhan Kumar, Ankit Kumar Pandey, A Simulation-Based Study of Back-Illuminated Lateral Ge/GeSn/Ge Photodetectors on Si Platform for Mid-Infrared Image Sensing, IEEE Transactions on Electron Devices, February 2023
4	Harshvardhan Kumar · Bhavika Agarwal · Rikmantra Basu, Possibility of Si(1-x)Sn(x) alloy System for Photonic Devices: Field-Effect Phototransistors for Near-Infrared Applications, XXXVth URSI General Assembly and Scientific Symposium, January 2023
5	A.K. Pandey, Harshvardhan Kumar, Quality factor enhanced plasmonic grating sensor in the near infrared region of application., Quality factor enhanced plasmonic grating sensor in the near infrared region of application. Opt Quant Electron 55, 57 (2023). JAN 2023 IndexedIn : [Scopus,WoS] DOI : https://doi.org/10.1007/s11082-022-04327-x,
6	Harshvardhan Kumar and C. -H. Lin, "High-Performance Lateral Metal-Germanium-Metal SWIR Photodetectors Using a-Si:H Interlayer for Dark Current Reduction,", "High-Performance Lateral Metal-Germanium-Metal SWIR Photodetectors Using a-Si:H Interlayer for Dark Current Reduction," in IEEE Photonics Journal, vol. 15, no. 1, pp. 1-8, Feb. 2023, Art no. 6800408 JAN 2023 IndexedIn : [Scopus,WoS,UGC CARE List] DOI : 10.1109/JPHOT.2023.3236817,
7	Harshvardhan Kumar, Qimiao Chen, and Chuan Seng Tan., "Lateral GeSn waveguide-based homojunction phototransistor for next-generation 2000nm communication and sensing applications.", "Lateral GeSn waveguide-based homojunction phototransistor for next-generation 2000nm communication and sensing applications." Semiconductor Science and Technology (2023) JAN 2023 IndexedIn : [Scopus,WoS,UGC CARE List] DOI : 10.1088/1361-6641/acb0f5,
8	Harshvardhan Kumar and C. -H. Lin,, "High-Performance Lateral Metal-Germanium-Metal SWIR Photodetectors Using a-Si:H Interlayer for Dark Current Reduction,", "High-Performance Lateral Metal-Germanium-Metal SWIR Photodetectors Using a-Si:H Interlayer for Dark Current Reduction," in IEEE Photonics Journal, vol. 15, no. 1, pp. 1-8, Feb. 2023, Art no. 6800408, doi: 10.1109/JPHOT.2023.3236817. FEB 2023 IndexedIn : [Scopus,WoS,UGC CARE List] DOI : 10.1109/TED.2023.3242929,
9	Harshvardhan Kumar and Ankit Kumar Pandey, "Numerical investigation of a Ge 1-x Sn x-on-AlN waveguide and its sensing mechanism for the detection of trace gases in the mid-infrared regime.", "Numerical investigation of a Ge 1-x Sn x-on-AlN waveguide and its sensing mechanism for the detection of trace gases in the mid-infrared regime." JOSA B 40, no. 6 (2023): 1427-1434 MAY 2023 IndexedIn : [Scopus,WoS,UGC CARE List] DOI : https://doi.org/10.1364/JOSAB.484610,
10	B. Agarwal and Harshvardhan Kumar, "Novel Group-IV Alloy-Based MOS Field-Effect Phototransistors for Near-Infrared Applications,", "Novel Group-IV Alloy-Based MOS Field-Effect Phototransistors for Near-Infrared Applications," in IEEE Sensors Journal, vol. 23, no. 15, pp. 16797-16804, 1 Aug.1, 2023. JUN 2023 DOI : 10.1109/JSEN.2023.3287880.,
11	Harshvardhan Kumar, V. Timofeev and R. Basu, "Mid-Infrared Photodetectors-based on Lattice Matched SiGeSn/GeSn Heterojunction Bipolar Transistor with an i-GeSn Absorber Layer,", "Mid-Infrared Photodetectors-based on Lattice Matched SiGeSn/GeSn Heterojunction Bipolar Transistor with an i-GeSn Absorber Layer," in IEEE Sensors Journal, 2023 (Early Access). OCT 2023 IndexedIn : [Scopus,WoS,UGC CARE List] DOI : 10.1109/JSEN.2023.3319501,
12	Harshvardhan Kumar and R. Basu, "Design of Mid-Infrared Ge1–x Snx Homojunction p-i-n Photodiodes on Si Substrate,", "Design of Mid-Infrared Ge1–x Snx Homojunction p-i-n Photodiodes on Si Substrate," in IEEE Sensors Journal, vol. 22, no. 8, pp. 7743-7751, 15 April15, 2022, DOI: 10.1109/JSEN.2022.3159833. MAR 2022 IndexedIn : [Scopus,WoS] DOI : DOI: 10.1109/JSEN.2022.3159833.,
13	Harshvardhan Kumar and A. K. Pandey, "Si-based High Responsivity Germanium-Tin MQW p-i-n Photodetectors for Broadband Applications,", "Si-based High Responsivity Germanium-Tin MQW p-i-n Photodetectors for Broadband Applications," 2022 3rd URSI Atlantic and Asia Pacific Radio Science Meeting (AT-AP-RASC), 2022, pp. 1-3, DOI: 10.23919/AT-AP-RASC54737.2022.9814219. JULY 2022 IndexedIn : [Scopus] DOI : 10.23919/AT-AP-RASC54737.2022.9814219.,
14	Harshvardhan Kumar, A. Kumar Pandey and C. -H. Lin,, "Optimal Design and Noise Analysis of High-Performance DBR-Integrated Lateral Germanium (Ge) Photodetectors for SWIR Applications,", , "Optimal Design and Noise Analysis of High-Performance DBR-Integrated Lateral Germanium (Ge) Photodetectors for SWIR Applications," in IEEE Journal of the Electron Devices Society, vol. 10, pp. 649-659, 2022, DOI: 10.1109/JEDS.2022.3195210. AUG 2022 IndexedIn : [Scopus,WoS] DOI : DOI: 10.1109/JEDS.2022.3195210.,
15	A. K. Pandey and Harshvardhan Kumar, "Numerical simulation of silicon grating-based plasmonic sensor,", "Numerical simulation of silicon grating-based plasmonic sensor," 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2022, pp. 189-190, DOI: 10.1109/NUSOD54938.2022.9894747. SEPT 2022 IndexedIn : [Scopus] DOI : DOI: 10.1109/NUSOD54938.2022.9894747,
16	S. Ghosh, Harshvardhan Kumar, B. Mukhopadhyay and G. -E. Chang, "Design and Modeling of High-Performance DBR-Based Resonant-Cavity-Enhanced GeSn Photodetector for Fiber-Optic Telecommunication Networks,", "Design and Modeling of High-Performance DBR-Based Resonant-Cavity-Enhanced GeSn Photodetector for Fiber-Optic Telecommunication Networks," in IEEE Sensors Journal, vol. 21, no. 8, pp. 9900-9908, 15 April15, 2021, DOI: 10.1109/JSEN.2021.3054475. JAN 2021 ,
17	Harshvardhan Kumar and Rikmantra Basu, R, Study of the effect of temperature on the detectivity and sensitivity of GeSn-based heterojunction phototransistor for mid-wave infrared applications., Study of the effect of temperature on the detectivity and sensitivity of GeSn-based heterojunction phototransistor for mid-wave infrared applications. Appl. Phys. B 127, 13 (2021). https://doi.org/10.1007/s00340-020-07569-3 (IF: 1.817) JAN 2021 ,
18	Harshvardhan Kumar and Rikmantra Basu,, Impacts of Emitter Layer Thickness on the Cutoff Frequency of GeSn/Ge Heterojunction Phototransistors. In: Das N.R., Sarkar S. (eds) Computers and Devices for Communication, Impacts of Emitter Layer Thickness on the Cutoff Frequency of GeSn/Ge Heterojunction Phototransistors. In: Das N.R., Sarkar S. (eds) Computers and Devices for Communication. CODEC 2019. Lecture Notes in Networks and Systems, vol 147. Springer, Singapore. https://doi.org/10.1007/978-981-15-8366-7_30 FEB 2021 ,
19	Harshvardhan Kumar, "High-speed short-wave infrared Si-based GeSn MQW phototransistor: an alternative of existing photodetectors,", "High-speed short-wave infrared Si-based GeSn MQW phototransistor: an alternative of existing photodetectors," IOP-Semiconductor Science and Technology, (IF: 2.361). DOI:https://doi.org/10.1088/1361-6641/abf908 APRIL 2021 ,
20	Lin, Kuan-Chih, Harshvardhan Kumar, and Guo-En Chang., "Germanium-Tin Lateral pin Waveguide Photodetectors for Mid-Infrared Silicon Photonics.", "Germanium-Tin Lateral pin Waveguide Photodetectors for Mid-Infrared Silicon Photonics." CLEO: Applications and Technology. Optical Society of America, 2021. AUG 2021 DOI : https://doi.org/10.1364/CLEO_AT.2021.JW1A.140,
21	Harshvardhan Kumar and Ankit Kumar Pandey, "GeSn-based Multiple-Quantum-Well Photodetectors for Mid-Infrared Sensing Applications", "GeSn-based Multiple-Quantum-Well Photodetectors for Mid-Infrared Sensing Applications" in IEEE Transactions on NanoBioscience, 2021 (Early Access). [IF: 2.935] DEC 2021 IndexedIn : [Scopus,WoS] DOI : 10.1109/TNB.2021.3136571,
22	Harshvardhan Kumar, Rikmantra Basu, and Guo-En Chang, "Impact of Temperature and Doping on the Performance of Ge/Ge1-xSnx/Ge Heterojunction Phototransistors,", "Impact of Temperature and Doping on the Performance of Ge/Ge1-xSnx/Ge Heterojunction Phototransistors," in IEEE Photonics Journal, vol. 12, no. 3, pp. 1-14, June 2020, Art no. 6801814, DOI: 10.1109/JPHOT.2020.2996808 (IF: 2.833). MAY 2020 ,
23	S. Ghosh, K-C Lin, C-H Tsai, Harshvardhan Kumar, Q. Chen, L. Zhang, B. Son, C. S. Tan, M. Kim, B. Mukhopadhyay, and G-E Chang, "Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications.", Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications." Micromachines 11.9 (2020): 795. (IF: 2.523) AUG 2020 ,
24	Harshvardhan Kumar and Rikmantra Basu, "Effect of Defects on the Performance of Si-Based GeSn/Ge Mid-Infrared Phototransistors,", "Effect of Defects on the Performance of Si-Based GeSn/Ge Mid-Infrared Phototransistors," in IEEE Sensors Journal, vol. 21, no. 5, pp. 5975-5982, 1 March 1, 2021, DOI: 10.1109/JSEN.2020.3036890. NOV 2020 ,
25	Rikmantra Basu and Harshvardhan Kumar, “Noise Analysis of Optimized Ge/Ge1-xSnx/Ge p-n-p Heterojunction Phototransistors for Long-Wavelength Optical Receivers”, “Noise Analysis of Optimized Ge/Ge1-xSnx/Ge p-n-p Heterojunction Phototransistors for Long-Wavelength Optical Receivers” Journal of Optical and Quantum Electronics, Springer, vol. 51, no. 2, pp. 1–12, 2019.(IF: 1.842) [DOI: 10.1007/s11082-019-1765-4]. FEB 2019 ,
26	Harshvardhan Kumar, Rikmantra Basu, and Jyoti Gupta, "Small-Signal Compact Circuit Modeling of Group IV Material-Based Heterojunction Phototransistors for Optoelectronic Receivers,", "Small-Signal Compact Circuit Modeling of Group IV Material-Based Heterojunction Phototransistors for Optoelectronic Receivers," in IEEE Transactions on Electron Devices, vol. 66, no. 4, pp. 1797-1803, April 2019, DOI: 10.1109/TED.2019.2896068 (IF: 2.913). FEB 2019 ,
27	Harshvardhan Kumar and Rikmantra Basu, "Enhanced Signal-to-Noise Ratio of Ge/Gei-xSnX/Ge based Multiple Quantum Well Heterojunction Phototransistor for SWIR Photodetection,", "Enhanced Signal-to-Noise Ratio of Ge/Gei-xSnX/Ge based Multiple Quantum Well Heterojunction Phototransistor for SWIR Photodetection," 2019 URSI Asia-Pacific Radio Science Conference (AP-RASC), New Delhi, India, 2019, pp. 1-4. DOI: 10.23919/URSIAP-RASC.2019.8738516. JUN 2019 ,
28	Rikmantra Basu, Preeti Giri, and Harshvardhan Kumar, “Influence of Doping and Splitting of Source in a Group IV Material Based Tunnel Field Effect Transistor”, “Influence of Doping and Splitting of Source in a Group IV Material Based Tunnel Field Effect Transistor” Journal of Electronic Materials, Springer, vol. 48, pp. 2691-2699, 2019 (IF: 1.774) [DOI: 10.1007/s11664-019-06923-2]. JAN 2019 ,
29	Harshvardhan Kumar and Rikmantra Basu, "Effect of Active Layer Scaling on the Performance of Ge1–xSnx Phototransistors,", "Effect of Active Layer Scaling on the Performance of Ge1–xSnx Phototransistors," in IEEE Transactions on Electron Devices, vol. 66, no. 9, pp. 3867-3873, Sept. 2019, DOI: 10.1109/TED.2019.2925892 (IF: 2.913). JULY 2019 ,
30	Harshvardhan Kumar and Rikmantra Basu, "Design and Analysis of Ge/Ge1-xSnx/Ge Heterojunction Phototransistor for MIR Wavelength Biological Applications,", "Design and Analysis of Ge/Ge1-xSnx/Ge Heterojunction Phototransistor for MIR Wavelength Biological Applications," in IEEE Sensors Journal, vol. 20, no. 7, pp. 3504-3511, 1 April1, 2020, DOI: 10.1109/JSEN.2019.2960006 (IF: 3.073). DEC 2019 ,
31	Harshvardhan Kumar and Rikmantra Basu,, "Comprehensive Study and Noise Analysis of GeSn-based p-n-p Heterojunction Phototransistors for Efficient Detection,", "Comprehensive Study and Noise Analysis of GeSn-based p-n-p Heterojunction Phototransistors for Efficient Detection," 2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Hong Kong, China, 2018, pp. 11-12. DOI:10.1109/NUSOD.2018.8570253 DEC 2018 ,
32	Harshvardhan Kumar and Rikmantra Basu,, “Noise Modeling of Group IV Material based Heter-junction Photo Transistor for Fibre Optic Telecommunication Networks”,, , “Noise Modeling of Group IV Material based Heter-junction Photo Transistor for Fibre Optic Telecommunication Networks”, IEEE Sensors Journal, vol. 18, No. 22, 2018 (IF: 3.073). [DOI: 10.1109/JSEN.2018.2869975]. SEPT 2018 ,
33	Ankit Kumar Pandey, Rikmantra Basu, Harshvardhan Kumar, and Guo-En Chang, , "Comprehensive Analysis and Optimal Design of Ge/GeSn/Ge p-n-p Infrared Heterojunction Phototransistors,", "Comprehensive Analysis and Optimal Design of Ge/GeSn/Ge p-n-p Infrared Heterojunction Phototransistors," in IEEE Journal of the Electron Devices Society, vol. 7, pp. 118-126, 2019, DOI: 10.1109/JEDS.2018.2884253 (IF: 2.555). NOV 2018 ,

Workshop attended

	Type	Month	Year	Information
1	Workshop	March	2022	Participation to the conference in 2022 International Workshop on Group IV Photonics Electronics and Communication Engineering Department, National Institute of Technology (NIT) Delhi, India and Advanced Institute of Manufacturing with High-tech Innovations, National Chung Cheng University (CCU), Taiwan
2	Conference - International	May	2022	Attended to present novel research; "Si-based High Responsivity Germanium-Tin MQW p-i-n Photodetectors for Broadband Applications," 2022 3rd URSI Atlantic and Asia Pacific Radio Science Meeting (AT-AP-RASC), 2022, Gran Canaria, Spain.
3	Workshop	September	2020	Attended COMSOL Multiphysics training programme held at the National Chung Cheng University, Taiwan.
4	Conference - International	January	2019	Attended to present a novel research; "Enhanced Signal-to-Noise Ratio of Ge/Gei-xSnX/Ge based Multiple Quantum Well Heterojunction Phototransistor for SWIR Photodetection," 2019 URSI Asia-Pacific Radio Science Conference (AP- RASC), New Delhi, India, 2019