The LNM Institute of Information Technology

Kanjalochan Jena

kanjalochan.jena@lnmiit.ac.in

Date of joining:

Department:

Electronics and Communication Engineering

Summary

Dr Jena's research interests include semiconductor device physics, device design for logic, analog and RF applications, MOSHEMT structures for biosensing applications and GaN-based wide bandgap devices for microwave applications. In these fields, he has coauthored more than 30 scientific articles in reviewed international journals/conferences. His work has been well cited in journals and conference proceedings. He has been a technical reviewer for several IEEE, Elsevier, IOP, IET, Springer and Wiley journals.

Biography

Kanjalochan Jena has received the Ph.D. degree in Microelectronics from the National Institute of Technology, Silchar, India, in 2016. He worked as Assistant Professor (from June 2016 to June 2018) in the School of Electronics Engineering of Kalinga Institute of Industrial Technology Bhubaneswar, India. From July 2018, he has been working as an Assistant Professor at THE LNM Institute of Industrial Technology, Jaipur, India.

Research Area

Solid-State Devices, Nanotechnology and Biosensors:Compact Modeling and Simulation

Personal information

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Dr. Kanjalochan Jena

Assistant Professor

Electronics and Communication Engineering

Education

	Degree/Diploma	Institute/ Organization	Year	Branch/Specialization
1	Ph. D. Doctor of Philosophy	National Institute of Technology, Silchar	2016	GaN Based MOSHEMTs: Compact Modeling and Simulation
2	M. Tech. Master of Technology	National Institute of Technology, Silchar	2013	Microelectronics and VLSI

Experience

	Name of Organization	Post/Designation	Duration From	Duration To
1	KIIT Deemed To be University	Assistant Professor	2016	2018

Publications

1	1. Abdul Naim Khan, Aasif Mohammad Bhat, K. Jena, Trupti Ranjan Lenka, G. Chatterjee, Improved Breakdown voltage mechanism in AlGaN/GaN HEMT for R.F./Microwave applications: Design and physical Insights of Dual Field Plate", Microelectronics Reliability, March 2023
2	A. N. Khan, Meenakshi Chauhan, K. Jena, G. Chatterjee,, “Improved Analog performance of PZT Ferroelectric AlGaN/AlN/GaN E-Mode GR-MOSHEMT”, “Improved Analog performance of PZT Ferroelectric AlGaN/AlN/GaN E-Mode GR-MOSHEMT”, In 2022 The Maiden Edition of IEEE Delhi Section International Conference on Electrical, Electronics and Computer Engineering, IEEE, 2022.[Accepted, In Press] FEB 2022 ,
3	Meenakshi Chauhan, A. N. Khan, Prof. Raghuvir Tomar, K. Jena, “Analog performance of Normally-On Si3N4/AlN/ß-Ga2O3 HEMT”, “Analog performance of Normally-On Si3N4/AlN/ß-Ga2O3 HEMT”, 2nd International Conference on Micro/Nanoelectronics Devices, Circuits and systems, IEEE, 2022V MAR 2022 IndexedIn : [Scopus],
4	A. N. Khan, S. N. Mishra, Meenakshi Chauhan, K. Jena, G. Chatterjee, “Influence of Al2O3 Oxide layer thickness variation on PZT Ferroelectric Al0.3Ga0.7N/AlN/GaN E-Mode GR-MOSHEMT”, “Influence of Al2O3 Oxide layer thickness variation on PZT Ferroelectric Al0.3Ga0.7N/AlN/GaN E-Mode GR-MOSHEMT”, HEMT Technology and Applications, Springer, 2022. APRIL 2022 IndexedIn : [Scopus],
5	Meenakshi Chauhan, A. N. Khan, Prof. Raghuvir Tomar, K. Jena,, “Comparative Analysis of oxide and nitride as dielectrics in ß-Ga2O3 HEMT”, “Comparative Analysis of oxide and nitride as dielectrics in ß-Ga2O3 HEMT”, HEMT Technology and Applications, Springer, 2022 APRIL 2022 IndexedIn : [Scopus],
6	A. N. Khan, K. Jena, G. Chatterjee et al, An Approach Towards Low Cost III-Nitride GaN/InGaN Solar Cell: the Use of Si/SiCN Substrate. Silicon (2021). https://doi.org/10.1007/s12633-021-01003-9 FEB 2021 IndexedIn : [Scopus] SCI, An Approach Towards Low Cost III-Nitride GaN/InGaN Solar Cell: the Use of Si/SiCN Substrate. Silicon (2021). https://doi.org/10.1007/s12633-021-01003-9 FEB 2021 IndexedIn : [Scopus] SCI,
7	S. Mishra, S. Verma, S. Prasad, S. S. Bordoloi, R. Goswami, K. Jena, V. K. Jha7, K. Parvathi, “A Low Cost Charcoal Film Based Moisture Sensor: fabrication and computing”, “A Low Cost Charcoal Film Based Moisture Sensor: fabrication and computing”, Soft computing: Theories and Applications, JUN 2020 ,
8	S. N. Mishra, R. Shah, K. Jena, , “Normally-Off AlGaN/GaN MOSHEMT as Lebel Free Biosensor”, “Normally-Off AlGaN/GaN MOSHEMT as Lebel Free Biosensor” ECS Journal of Solid State Science and Technology, Vol.9, Issue. 06, pp. 065002, July, 2020. [IF: 2.142 (2019), SCIE, JCR]. (IOP) JUN 2020 ,
9	S. N. Mishra and K. Jena, “A Dielectric-Modulated Normally-Off AlGaN/GaN MOSHEMT for Bio-sensing Application: Analytical Modeling Study and Sensitivity Analysis”, “A Dielectric-Modulated Normally-Off AlGaN/GaN MOSHEMT for Bio-sensing Application: Analytical Modeling Study and Sensitivity Analysis”, Journal of Korean Physical Society, Vol.74, pp. 349, Jan, 2019. [IF: 0.535 (2019), SCI, JCR]. (Springer) JAN 2019 ,
10	S. N. Mishra, K. Jena, R. Goswami, A. Agrawal, “Field-Plated AlInN/AlN/GaN MOSHEMT with Improved RF Power Performance”, “Field-Plated AlInN/AlN/GaN MOSHEMT with Improved RF Power Performance” , Advances in Signal Processing and Communication, pp. 611-617, 2018 NOV 2018 IndexedIn : [Scopus] Scopus,
11	K. Jena, R. Swain, and T. R. Lenka, “Physics-Based Mathematical Model of 2DEG Sheet Charge Density and DC Characteristics of AlInN/AlN/GaN MOSHEMT,”, “Physics-Based Mathematical Model of 2DEG Sheet Charge Density and DC Characteristics of AlInN/AlN/GaN MOSHEMT,” Int. Journal of Numerical Modeling, vol. 30, no. 01 FEB 2017 ,
12	R. Swain, K. Jena and T. R. Lenka, “Modeling of Capacitance and Threshold Voltage for ultra-thin normally-off AlGaN/GaN MOSHEMT,”, “Modeling of Capacitance and Threshold Voltage for ultra-thin normally-off AlGaN/GaN MOSHEMT,” Pramana-Journal of Physics,vol. 88, no. 03, JAN 2017 ,
13	K. Jena, R. Swain, and T. R. Lenka, Effect of thin gate dielectrics on DC, RF and Linearity characteristics of Lattice-Matched AlInN/AlN/GaN MOSHEMT,”, “Effect of thin gate dielectrics on DC, RF and Linearity characteristics of Lattice-Matched AlInN/AlN/GaN MOSHEMT,” IET Circuits, Devices & Systems, vol 10, no. 5, pp. 423-432 SEPT 2016 ,
14	R. Swain, K. Jena, and T. R. Lenka, Modeling of Forward Gate Leakage Current in MOSHEMT Using Trap-Assisted Tunneling and Poole–Frenkel Emission,”, “Modeling of Forward Gate Leakage Current in MOSHEMT Using Trap-Assisted Tunneling and Poole–Frenkel Emission,” IEEE Transaction on ElectronDevices, vol.63, Issue. 06, pp. 2346-2352 JUN 2016,
15	R. Swain, K. Jena and T. R. Lenka, Oxide interfacial charge engineering towards normally-off AlN/GaN MOSHEMT,” Materials Science in Semiconductor Processing, vol. 53, pp. 66-71 JUN 2016, Oxide interfacial charge engineering towards normally-off AlN/GaN MOSHEMT,” Materials Science in Semiconductor Processing, vol. 53, pp. 66-71 JUN 2016 ,
16	K. Jena, R. Swain, and T. R. Lenka,, , “Impact of AlN Spacer on Analog Performance of Lattice-Matched AlInN/AlN/GaN MOSHEMT,”, , “Impact of AlN Spacer on Analog Performance of Lattice-Matched AlInN/AlN/GaN MOSHEMT,” Journal of Electronic Materials, vol. 45, Issue. 04, pp. 2172-2177 APRIL 2016 ,
17	K. Jena, R. Swain, and T. R. Lenka, “Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices,”, “Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices,” Int. Journal of Numerical Modeling, vol 29, Issue. 01 FEB 2016 ,
18	J. Panda, K. Jena, R. Swain, T.R. Lenka, , “ Modeling on Oxide Dependant 2DEG Sheet Charge Density and Threshold Voltage in AlGaN/GaN MOSHEMT,”, “ Modeling on Oxide Dependant 2DEG Sheet Charge Density and Threshold Voltage in AlGaN/GaN MOSHEMT,” Journal of Semiconductors,vol 37, Issue. 04 APRIL 2016 ,
19	R. Swain, K. Jena and T. R. Lenka,, Model Development for I-V and Transconductance Characteristics of Normally-off AlN/GaN MOSHEMT,”, https://www.lnmiit.ac.in/Department/ECE/ece_FacultyProfile.aspx?nDeptID=40373#:~:text=%E2%80%9CModel%20Development%20for%20I%2DV%20and%20Transconductance%20Characteristics%20of%20Normally%2Doff%20AlN/GaN%20MOSHEMT%2C%E2%80%9D%20Semiconductors%2C%20vol.%2050%2C%20Issue%2003%2C%20pp.%20384%2D389%20%C2%A0%C2%A0%20MAR%C2%A0%C2%A02016%20%C2%A0%C2%A0%20%C2%A0%C2%A0,
20	K. Jena, R. Swain, T.R. Lenka, “Impact of barrier thickness on gate capacitance—Modeling and Comparative analysis of GaN based MOSHEMTs,”, , “Impact of barrier thickness on gate capacitance—Modeling and Comparative analysis of GaN based MOSHEMTs,” Journal of Semiconductors, vol. 36, no. 3, pp. 034003-1-034003-5 MAR 2015 ,
21	K. Jena, R. Swain, T.R. Lenka, “Impact of oxide thickness on gate capacitance-Modeling and Comparative Analysis of GaN based MOSHEMTs,”, , “Impact of oxide thickness on gate capacitance-Modeling and Comparative Analysis of GaN based MOSHEMTs,” Pramana-Journal of Physics, vol. 85, Issue. 06, pp. 1221–1232 DEC 2015,
22	K. Jena, R. Swain, and T. R. Lenka, “Impact of a Drain Field Plate on the Breakdown Characteristics of AlInN/GaN MOSHEMT,”, , “Impact of a Drain Field Plate on the Breakdown Characteristics of AlInN/GaN MOSHEMT,” Journal of Korean Physical Society, 2015.vol. 67, Issue. 9, pp. 1592-1596 NOV 2015,
23	R. Swain, J. panda, K. Jena and T. R. Lenka, “Modeling and Simulation of Oxide Dependent 2DEG Sheet Charge Density in AlGaN/GaN MOSHEMT,”, “Modeling and Simulation of Oxide Dependent 2DEG Sheet Charge Density in AlGaN/GaN MOSHEMT,” Journal of Computational Electronics, vol. 14, Issue. 03, pp. 754-761 SEPT 2015 ,
24	R. Swain, K. Jena and T. R. Lenka,, “Interface DOS Dependent Analytical Model Development for DC Characteristics of Normally-off AlN/GaN MOSHEMT,”, “Interface DOS Dependent Analytical Model Development for DC Characteristics of Normally-off AlN/GaN MOSHEMT,” Superlattices and Microstructures, vol. 84, pp.54-65, AUG 2015 ,

Workshop attended

	Type	Month	Year	Information
1	Training	October	2020	. Online training Programme on “Digital Tools for Writing, Authoring and Reviewing Manuscripts” Supported by Ministry of Electronics and Information Technology (MeitY), Electronics & ICT Academies, MNIT Jaipur, NIT Patna & IIT Guwahati organized during 21st September and 2nd October 2020. This programme is endorsed by NBA/AICTE/UGC.
2	Conference - International	January	2020	“Demystifying 5G RF ASICs” the two week online Faculty development program organized by Electronics and ICT Academy from 24 August – 04 September 2020.
3	Conference - National	November	2016	IEEE TENCON 2016 — Technologies for Smart Nation, Singapore
4	Conference - National	December	2013	Continuing Education Programme (CEP) course on “Semiconductor Technology & Manufacturing” at “IIT BOMBAY